Facilities:

sei in: Map » Ground Floor » Laboratory

Phone: 9474

DVR (local user access)

CBE, Plasma Etching and Deposition

Map: Lab 0.5

Chemical Beam Epitaxy for semiconductor nanowire growth;
Reactive Ion Etching (RIE) system based on CH4/H2 chemistry;
PECVD system for SiO2 growth;
RIE-ICP system based on Cl, BCl3 chemistry;
DC - Sputtering system for Nb and NbN film deposition, Ar sputtering, Sm desorption;
Atomic Layer Deposition (ALD): "Opal", thermal and plasma system by Oxford Instruments;

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